Effect of exciton oscillator strength on upconversion photoluminescence in GaAs/AlAs multiple quantum wells

Journal Article · Mon Nov 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901080· OSTI ID:22310699

Kojima, Osamu; Okumura, Shouhei; Kita, Takashi ^[1]; Akahane, Kouichi ^[2]

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1. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)
2. National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795 (Japan)

We report upconversion photoluminescence (UCPL) in GaAs/AlAs multiple quantum wells. UCPL from the AlAs barrier is caused by the resonant excitation of the excitons in the GaAs well. When the quantum well has sufficient miniband width, UCPL is hardly observed because of the small exciton oscillator strength. The excitation-energy and excitation-density dependences of UCPL intensity show the exciton resonant profile and a linear increase, respectively. These results demonstrate that the observed UCPL caused by the saturated two-step excitation process requires a large number of excitons.

• OSTI ID: 22310699
• Journal Information: Applied Physics Letters, Vol. 105, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ELECTRIC POTENTIAL
EXCITATION
EXCITONS
GALLIUM ARSENIDES
OSCILLATOR STRENGTHS
PHOTOLUMINESCENCE
QUANTUM WELLS