Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases
- Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)
In this work, signatures of plasma waves in GaN-based high electron mobility transistors were observed by direct electrical measurement at room temperature. Periodic grating-gate device structures were fabricated and characterized by on-wafer G-band (140–220 GHz) s-parameter measurements as a function of gate bias voltage and device geometry. A physics-based equivalent circuit model was used to assist in interpreting the measured s-parameters. The kinetic inductance extracted from the measurement data matches well with theoretical predictions, consistent with direct observation of plasma wave-related effects in GaN-channel devices at room temperature. This observation of electrically significant room-temperature plasma-wave effects in GaN-channel devices may have implications for future millimeter-wave and THz device concepts and designs.
- OSTI ID:
- 22310683
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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