Alternating current response of carbon nanotubes with randomly distributed impurities
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)
- Department of Electrical Engineering and Department of Liberal Arts (Physics), Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585 (Japan)
The increasing need for nanodevices has necessitated a better understanding of the electronic transport behavior of nanomaterials. We therefore theoretically examine the AC transport properties of metallic carbon nanotubes with randomly distributed impurities. We find that the long-range impurity scattering increases the emittance, but does not affect the DC conductance. The estimated dwell time of electrons increases with the potential amplitudes. That is, multiple scattering by the impurities increases the kinetic inductance in proportion to the dwell time, which eventually increases the emittance. We believe that our findings can contribute significantly to nanodevice development.
- OSTI ID:
- 22310672
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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