Critical boron-doping levels for generation of dislocations in synthetic diamond

Journal Article · Mon Oct 27 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4900741· OSTI ID:22310670

Araújo, D.; Pinero, J. C.; Lloret, F.; Villar, M. P. ^[1]; Fiori, A.; Achatz, P.; Chicot, G.; Bustarret, E. ^[2]; Jomard, F. ^[3]

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1. Departamento de Ciencias de los Materiales e Ingeniería Metalúrgica y Química, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain)
2. Université Grenoble Alpes, Institut NEEL, 25 av. des Martyrs, 38042 Grenoble (France)
3. GEMaC, CNRS and Université de Versailles St Quentin, 45 Avenue des États-Unis, 78035 Versailles (France)

Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH{sub 4}/H{sub 2} molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 10{sup 20}at/cm{sup 3} range in the 〈111〉 direction and at 3.2 × 10{sup 21 }at/cm{sup 3} for the 〈001〉 one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

• OSTI ID: 22310670
• Journal Information: Applied Physics Letters, Vol. 105, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON ADDITIONS
BURGERS VECTOR
CONCENTRATION RATIO
CRYSTAL DEFECTS
DIAMONDS
DISLOCATIONS
LAYERS
STRAINS
TRANSMISSION ELECTRON MICROSCOPY