On the doping limit for strain stability retention in phosphorus doped Si:C

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4890303· OSTI ID:22308910

Chuang, Yao-Teng; Hu, Kuan-Kan; Woon, Wei-Yen ^[1]

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1. Department of Physics, National Central University, Jungli 32054, Taiwan (China)

Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below β-SiC precipitation threshold temperature, especially for the highest phosphorus doped case. Most of the substitutional carbon is retained and no further β-SiC formation can be found for all samples investigated. Volume compensation through gettering of interstitial atoms around substitutional carbon is considered as a probable mechanism for the observed strain relaxation. The strain relaxation effect can be further reduced with HF treatment prior to post-annealing process. We found an upper limit for ion implant dose (<1 × 10{sup 14} atom/cm{sup 2}) for the retention of strain stability in phosphorus doped Si:C.

• OSTI ID: 22308910
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CARBON
CARBON COMPOUNDS
DOPED MATERIALS
FOURIER TRANSFORM SPECTROMETERS
GETTERING
HALL EFFECT
ION IMPLANTATION
PHOSPHORUS ADDITIONS
PRECIPITATION
RELAXATION
RESOLUTION
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
STABILITY
STRAINS
X-RAY DIFFRACTION