Proposed measurement of spin currents in a GaAs crystal using the electro-optical Pockels effect
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China)
A new method for measuring spin currents is proposed, based on the linear electro-optic (Pockels) effect caused by the additional second-order nonlinear electric susceptibility (electro-optic tensor) generated by the spin currents. The non-zero elements of electro-optic tensor induced by spin currents in GaAs crystal are calculated, and the wave coupling theory of linear electro-optic effect is used to analyze the polarization change of a probe beam. The numerical results show that, for a linearly polarized probe beam with a frequency close to the band gap of GaAs crystal, its polarization rotation can be as large as 14 μrad under an applied electric field of about 350 V/mm. This effect should offer an alternative detection method for spintronics.
- OSTI ID:
- 22308709
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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