Tunable electronic structures of p-type Mg doping in AlN nanosheet

Journal Article · Mon Jul 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4891238· OSTI ID:22308554

Peng, Yuting; Xia, Congxin; Zhang, Heng; Wang, Tianxing; Wei, Shuyi ^[1]; Jia, Yu ^[2]

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1. Department of Physics, Henan Normal University, Xinxiang, Henan 453007 (China)
2. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

The p-type impurity properties are investigated in the Mg-doped AlN nanosheet by means of first-principles calculations. Numerical results show that the transition energy levels reduce monotonously with the increase in Mg doping concentration in the Mg-doped AlN nanosheet systems, and are lower than that of the Mg-doped bulk AlN case for the cases with larger doping concentration. Moreover, Mg substituting Al atom is energy favorably under N-rich growth experimental conditions. These results are new and interesting to further improve p-type doping efficiency in the AlN nanostructures.

• OSTI ID: 22308554
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
COMPUTERIZED SIMULATION
CRYSTAL GROWTH
DOPED MATERIALS
EFFICIENCY
ELECTRONIC STRUCTURE
ENERGY-LEVEL TRANSITIONS
IMPURITIES
MAGNESIUM ADDITIONS
NANOSTRUCTURES
P-TYPE CONDUCTORS