Modelling of InGaP nanowires morphology and composition on molecular beam epitaxy growth conditions
- Department of Electrical and Computer Engineering, McMaster University, Hamilton, Ontario L8S 4K1 (Canada)
An analytical kinetic model has been developed within this framework to describe the growth of ternary III-V semiconductor nanowires. The key to apply the model is to divide the ternary system into two separate binary systems and model each binary system separately. The model is used to describe the growth of InGaP nanowires. The growth conditions were varied among several samples, and the model was able to predict the temperature and growth rate behaviors. The model predicts the axial and radial elemental distribution along the nanowires and the dependence of the elemental distribution on the nanowire's diameter size for all growth rates. The model reveals the limitations of In incorporation into the nanowires for high temperatures or low growth rates and the effects of the group-V elements on the In incorporation.
- OSTI ID:
- 22308452
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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