All optical method for investigation of spin and charge transport in semiconductors: Combination of spatially and time-resolved luminescence
Journal Article
·
· Journal of Applied Physics
- Physique de la matière condensée, Ecole Polytechnique, CNRS, 91128 Palaiseau (France)
- Université de Toulouse, INSA-CNRS-UPS, 31077 Toulouse Cedex (France)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), University of Lille, CNRS, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq (France)
A new approach is demonstrated for investigating charge and spin diffusion as well as surface and bulk recombination in unpassivated doped semiconductors. This approach consists in using two complementary, conceptually related, techniques, which are time-resolved photoluminescence (TRPL) and spatially resolved microluminescence (μPL) and is applied here to p{sup +} GaAs. Analysis of the sole TRPL signal is limited by the finite risetime. On the other hand, it is shown that joint TRPL and μPL can be used to determine the diffusion constant, the bulk recombination time, and the spin relaxation time. As an illustration, the temperature variation of these quantities is investigated for p{sup +} GaAs.
- OSTI ID:
- 22308450
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Distinguishing bulk and surface recombination in CdTe thin films and solar cells using time-resolved terahertz and photoluminescence spectroscopies
Cross-Cutting Metrology Tools for In Operando Characterization of Carrier Dynamics in Photovoltaic Devices (Final Technical Report)
Numerical Analysis of Time Resolved Photoluminescence for Alumina/Cd(Se,Te) Double Heterostructures
Journal Article
·
Thu Oct 28 00:00:00 EDT 2021
· Journal of Applied Physics
·
OSTI ID:22308450
+3 more
Cross-Cutting Metrology Tools for In Operando Characterization of Carrier Dynamics in Photovoltaic Devices (Final Technical Report)
Technical Report
·
Mon Feb 28 00:00:00 EST 2022
·
OSTI ID:22308450
Numerical Analysis of Time Resolved Photoluminescence for Alumina/Cd(Se,Te) Double Heterostructures
Conference
·
Thu Aug 26 00:00:00 EDT 2021
·
OSTI ID:22308450
+1 more