Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

Journal Article · Wed Aug 20 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4893521· OSTI ID:22308253

Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V. ^[1]

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1. Ioffe Institute of the Russian Academy of Sciences, St. Petersburg (Russian Federation)

A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

• OSTI ID: 22308253
• Journal Information: AIP Conference Proceedings, Vol. 1610, Issue 1; Conference: TIDS15: 15. international conference on transport in interacting disordered systems, Sant Feliu de Guixols (Spain), 1-5 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
ARSENIC
DOPED MATERIALS
ELECTRON SPIN RESONANCE
LAYERS
MAGNETIC SUSCEPTIBILITY
SEMICONDUCTOR MATERIALS