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Title: IETS and quantum interference: Propensity rules in the presence of an interference feature

Abstract

Destructive quantum interference in single molecule electronics is an intriguing phenomenon; however, distinguishing quantum interference effects from generically low transmission is not trivial. In this paper, we discuss how quantum interference effects in the transmission lead to either low current or a particular line shape in current-voltage curves, depending on the position of the interference feature. Second, we consider how inelastic electron tunneling spectroscopy can be used to probe the presence of an interference feature by identifying vibrational modes that are selectively suppressed when quantum interference effects dominate. That is, we expand the understanding of propensity rules in inelastic electron tunneling spectroscopy to molecules with destructive quantum interference.

Authors:
;  [1];  [2]
  1. Technische Universität München, Electrical Engineering and Information Tech., Arcisstr. 21, 80333 München (Germany)
  2. Consiglio Nazionale delle Ricerche, ISMN, Via Salaria km 29.6, 00017 Monterotondo (Rome) (Italy)
Publication Date:
OSTI Identifier:
22308226
Resource Type:
Journal Article
Journal Name:
Journal of Chemical Physics
Additional Journal Information:
Journal Volume: 141; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-9606
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRON SPECTROSCOPY; INTERFERENCE; MOLECULES

Citation Formats

Lykkebo, Jacob, Solomon, Gemma C., E-mail: gsolomon@nano.ku.dk, Gagliardi, Alessio, and Pecchia, Alessandro. IETS and quantum interference: Propensity rules in the presence of an interference feature. United States: N. p., 2014. Web. doi:10.1063/1.4896234.
Lykkebo, Jacob, Solomon, Gemma C., E-mail: gsolomon@nano.ku.dk, Gagliardi, Alessio, & Pecchia, Alessandro. IETS and quantum interference: Propensity rules in the presence of an interference feature. United States. https://doi.org/10.1063/1.4896234
Lykkebo, Jacob, Solomon, Gemma C., E-mail: gsolomon@nano.ku.dk, Gagliardi, Alessio, and Pecchia, Alessandro. 2014. "IETS and quantum interference: Propensity rules in the presence of an interference feature". United States. https://doi.org/10.1063/1.4896234.
@article{osti_22308226,
title = {IETS and quantum interference: Propensity rules in the presence of an interference feature},
author = {Lykkebo, Jacob and Solomon, Gemma C., E-mail: gsolomon@nano.ku.dk and Gagliardi, Alessio and Pecchia, Alessandro},
abstractNote = {Destructive quantum interference in single molecule electronics is an intriguing phenomenon; however, distinguishing quantum interference effects from generically low transmission is not trivial. In this paper, we discuss how quantum interference effects in the transmission lead to either low current or a particular line shape in current-voltage curves, depending on the position of the interference feature. Second, we consider how inelastic electron tunneling spectroscopy can be used to probe the presence of an interference feature by identifying vibrational modes that are selectively suppressed when quantum interference effects dominate. That is, we expand the understanding of propensity rules in inelastic electron tunneling spectroscopy to molecules with destructive quantum interference.},
doi = {10.1063/1.4896234},
url = {https://www.osti.gov/biblio/22308226}, journal = {Journal of Chemical Physics},
issn = {0021-9606},
number = 12,
volume = 141,
place = {United States},
year = {Sun Sep 28 00:00:00 EDT 2014},
month = {Sun Sep 28 00:00:00 EDT 2014}
}