Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack

Journal Article · Tue Oct 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4898645· OSTI ID:22308173

Shekhter, P.; Eizenberg, M. ^[1]; Cvetko, D. ^[2]; Floreano, L.; Verdini, A. ^[2]; Nyns, L.; Van Elshocht, S. ^[3]; Kymissis, I. ^[4]

---

1. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa (Israel)
2. Laboratorio TASC/IOM-CNR, Area di ricerca, Trieste (Italy)
3. Imec, Kapeldreef 75, B-3001 Leuven (Belgium)
4. Department of Electrical Engineering, Columbia University, New York, New York 10027 (United States)

In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al{sub 2}O{sub 3} layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

• OSTI ID: 22308173
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
ANNEALING
DEPOSITION
GERMANATES
GERMANIUM OXIDES
INTERFACES
LAYERS
METALS
NANOELECTRONICS
REACTIVITY
RESOLUTION
SCALING
SCAVENGING
SEMICONDUCTOR MATERIALS
SURFACES
SYNCHROTRON RADIATION
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY