Low energy electron emission from surface-interface states of SiO{sub 2}:Ge films
Abstract
In this paper we present the results of optically stimulated electron emission (OSEE) investigation of thin SiO{sub 2} films implanted with Ge{sup +} ions. The emission models of Urbach rule and power Kane-dependence are used to fit OSEE spectra at different excitation energy ranges. The materials under study may find a number of technological applications in optical devices and ultraviolet sensors. Samples attestation was performed by electron microscopy and x-ray photoelectron spectroscopy (XPS). XPS data revealed strong dependence between the Si, Ge and O atoms state and annealing time. Observed correlations between parameter values of Urbach- and Kane-related models suggest the implantation-induced changeover of both the vibronic subsystem and energy band structure.
- Authors:
-
- Institute of Physics, University of Rostock, Universitatsplatz 3, D-18051 Rostock (Germany)
- Research Center Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden (Germany)
- Publication Date:
- OSTI Identifier:
- 22308116
- Resource Type:
- Journal Article
- Journal Name:
- AIP Conference Proceedings
- Additional Journal Information:
- Journal Volume: 1624; Journal Issue: 1; Conference: SIO2014: 10. international symposium on SiO2, advanced dielectrics and related devices, Cagliari (Italy), 16-18 Jun 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CORRELATIONS; ELECTRON EMISSION; ELECTRON MICROSCOPY; ELECTRONIC STRUCTURE; EMISSION SPECTRA; EXCITATION; GERMANIUM IONS; INTERFACES; ION IMPLANTATION; SENSORS; SILICON OXIDES; SURFACES; ULTRAVIOLET RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY
Citation Formats
Zatsepin, A. F., E-mail: a.f.zatsepin@urfu.ru, Buntov, E. A., E-mail: a.f.zatsepin@urfu.ru, Mikhailovich, A. P., E-mail: a.f.zatsepin@urfu.ru, Slesarev, A. I., E-mail: a.f.zatsepin@urfu.ru, Fitting, H. -J., and Schmidt, B. Low energy electron emission from surface-interface states of SiO{sub 2}:Ge films. United States: N. p., 2014.
Web. doi:10.1063/1.4900475.
Zatsepin, A. F., E-mail: a.f.zatsepin@urfu.ru, Buntov, E. A., E-mail: a.f.zatsepin@urfu.ru, Mikhailovich, A. P., E-mail: a.f.zatsepin@urfu.ru, Slesarev, A. I., E-mail: a.f.zatsepin@urfu.ru, Fitting, H. -J., & Schmidt, B. Low energy electron emission from surface-interface states of SiO{sub 2}:Ge films. United States. https://doi.org/10.1063/1.4900475
Zatsepin, A. F., E-mail: a.f.zatsepin@urfu.ru, Buntov, E. A., E-mail: a.f.zatsepin@urfu.ru, Mikhailovich, A. P., E-mail: a.f.zatsepin@urfu.ru, Slesarev, A. I., E-mail: a.f.zatsepin@urfu.ru, Fitting, H. -J., and Schmidt, B. 2014.
"Low energy electron emission from surface-interface states of SiO{sub 2}:Ge films". United States. https://doi.org/10.1063/1.4900475.
@article{osti_22308116,
title = {Low energy electron emission from surface-interface states of SiO{sub 2}:Ge films},
author = {Zatsepin, A. F., E-mail: a.f.zatsepin@urfu.ru and Buntov, E. A., E-mail: a.f.zatsepin@urfu.ru and Mikhailovich, A. P., E-mail: a.f.zatsepin@urfu.ru and Slesarev, A. I., E-mail: a.f.zatsepin@urfu.ru and Fitting, H. -J. and Schmidt, B.},
abstractNote = {In this paper we present the results of optically stimulated electron emission (OSEE) investigation of thin SiO{sub 2} films implanted with Ge{sup +} ions. The emission models of Urbach rule and power Kane-dependence are used to fit OSEE spectra at different excitation energy ranges. The materials under study may find a number of technological applications in optical devices and ultraviolet sensors. Samples attestation was performed by electron microscopy and x-ray photoelectron spectroscopy (XPS). XPS data revealed strong dependence between the Si, Ge and O atoms state and annealing time. Observed correlations between parameter values of Urbach- and Kane-related models suggest the implantation-induced changeover of both the vibronic subsystem and energy band structure.},
doi = {10.1063/1.4900475},
url = {https://www.osti.gov/biblio/22308116},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1624,
place = {United States},
year = {Tue Oct 21 00:00:00 EDT 2014},
month = {Tue Oct 21 00:00:00 EDT 2014}
}