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Title: Influence of sputtering power on the optical properties of ITO thin films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4898214· OSTI ID:22308008
; ;  [1];  [2]
  1. Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India)
  2. Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

OSTI ID:
22308008
Journal Information:
AIP Conference Proceedings, Vol. 1620, Issue 1; Conference: Optics 14: International conference on optics: Light and its interactions with matter, Calicut, Kerala (India), 19-21 Mar 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English