Fabrication of CuAl{sub 1−x}M{sub x}O{sub 2} (M = Fe, Cr)/Ni film delafossite compounds using spin coating and their microstructure and dielectric constant
- Jurusan Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Malang, Jalan Semarang 5, Malang 65145 (Indonesia)
The discovery of delafossite compound has encouraged more rapid technological developments particularly in transparent electronic devices. Copper oxide-based transparent thin films delafossite semiconductor recently give much attention in the field of optoelectronic technology, after the discovery of p-type CuAlO{sub 2}. The potential applications of a p-type semiconductor transparent conductive oxides (TCO) have been applied in broad field of optoelectronics. To explore a broad physical properties interms of magnetic conducting subtitution is understudied. In this work we report the fabrication of delafossite film on Ni substrate and their characterization of CuAl{sub 1−x}M{sub x}O{sub 2} delafossite compounds doped with Cr{sup 3+} and Fe{sup 3+} from the raw material of Cu(NO{sub 3}){sub 2}@@‡3H{sub 2}O, Al(NO{sub 3}){sub 3}@@‡9H{sub 2}O, Fe(NO{sub 3}){sub 3}@@‡9H{sub 2}O and Cr(NO{sub 3}){sub 3}@@‡9H{sub 2}O. The films were prepared using spin coating through a sol-gel technique at various concentrations of x = 0, 0.03, 0.04, and 0.05 for chromium and x = 0, 0.02, 0.04, 0.06, and 0.08 for iron doped. Crystal and microstructure were characterized by means of Cu-Kα Bragg-Brentano X-RD followed by High Score Plus and SEM-EDAX. The dielectric constants of the films were characterized using LCR meter. It was found that the CuAl{sub 1−x}M{sub x}O{sub 2}/Ni delafossite films were successfully fabricated. The CuAl{sub 1−x}Fe{sub x}O{sub 2} compound crystallized with lattice parameters of a = b ranged from 2.8603 Å to 2.8675 Å and c ranged from 16.9576 to 17.0763 Å. The increase of the dopant give rise to the increase of the lattice parameters. Since iron has bigger ionic radius (69 pm) than original site of Al{sup 3+} with radius of 53 pm the crystal volume lattice also increase. Further analyses of increasing volume of the crystal, as expected, affected to the decreasing of its dielectric constant. The similar trends also shown by Cr{sup 3+} doped of CuAl{sub 1−x}Cr{sub x}O{sub 2} films with smaller effects.
- OSTI ID:
- 22307905
- Journal Information:
- AIP Conference Proceedings, Vol. 1617, Issue 1; Conference: ICTAP 2013: 3. international conference on theoretical and applied physics, Malang, East Java (Indonesia), 10-11 Oct 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM IONS
CHROMIUM
CHROMIUM IONS
CONCENTRATION RATIO
COPPER OXIDES
CRYSTALS
DOPED MATERIALS
FABRICATION
IRON IONS
LATTICE PARAMETERS
MICROSTRUCTURE
PERMITTIVITY
RAW MATERIALS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SOL-GEL PROCESS
SPIN-ON COATING
SUBSTRATES
THIN FILMS