A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Journal Article · Sun Sep 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4895136· OSTI ID:22305974

Wu, Fangzhen; Wang, Huanhuan; Raghothamachar, Balaji; Dudley, Michael ^[1]; Mueller, Stephan G.; Chung, Gil; Sanchez, Edward K.; Hansen, Darren; Loboda, Mark J. ^[2]; Zhang, Lihua; Su, Dong; Kisslinger, Kim; Stach, Eric ^[3]

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1. Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York 11790 (United States)
2. Dow Corning Compound Semiconductor Solutions, Midland, Michigan 48686 (United States)
3. Center for Functional Materials, Brookhaven National Laboratory, Upton, New York 11973 (United States)

A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra.

• OSTI ID: 22305974
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BURGERS VECTOR
DISLOCATIONS
RESOLUTION
SILICON CARBIDES
STACKING FAULTS
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION