Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

Journal Article · Tue Oct 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4898683· OSTI ID:22305831

Guo, P.; Yu, G. Q.; Wei, H. X.; Li, D. L.; Kurt, H. ^[1]; Chen, J. Y.; Coey, J. M. D. ^[1]

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1. CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E_{{sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process, opening an additional conductance channel and thus enhancing the total conductance.}

• OSTI ID: 22305831
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON COMPOUNDS
COBALT COMPOUNDS
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
ELECTRON BEAMS
ELECTRONS
INTERFACES
IRON COMPOUNDS
MAGNESIUM OXIDES
MAGNETORESISTANCE
MAGNONS
SEMICONDUCTOR JUNCTIONS
SPECTRA
TEMPERATURE DEPENDENCE
TUNNEL EFFECT