Native point defects in GaSb

Journal Article · Tue Oct 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4898082· OSTI ID:22305786

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. ^[1]

---

1. Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

• OSTI ID: 22305786
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANIONS
ANNIHILATION
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
DOPED MATERIALS
ECOLOGICAL CONCENTRATION
FORECASTING
GALLIUM
GALLIUM ANTIMONIDES
LIFETIME
MONOCRYSTALS
N-TYPE CONDUCTORS
POINT DEFECTS
P-TYPE CONDUCTORS
SPECTROSCOPY
TELLURIUM ADDITIONS
TEMPERATURE DEPENDENCE
TRAPPING
VACANCIES