Accurate potential drop sheet resistance measurements of laser-doped areas in semiconductors
- Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore)
- Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, D-79110 Freiburg (Germany)
- The School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney NSW 2052 (Australia)
It is investigated how potential drop sheet resistance measurements of areas formed by laser-assisted doping in crystalline Si wafers are affected by typically occurring experimental factors like sample size, inhomogeneities, surface roughness, or coatings. Measurements are obtained with a collinear four point probe setup and a modified transfer length measurement setup to measure sheet resistances of laser-doped lines. Inhomogeneities in doping depth are observed from scanning electron microscope images and electron beam induced current measurements. It is observed that influences from sample size, inhomogeneities, surface roughness, and coatings can be neglected if certain preconditions are met. Guidelines are given on how to obtain accurate potential drop sheet resistance measurements on laser-doped regions.
- OSTI ID:
- 22305772
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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