Trap and recombination centers study in sprayed Cu₂ZnSnS₄ thin films

Journal Article · Tue Oct 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4897232· OSTI ID:22305771

Courel, Maykel; Vigil-Galán, O.; Jiménez-Olarte, D. ^[1]; Espíndola-Rodríguez, M. ^[1]; Saucedo, E. ^[2]

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1. Escuela Superior de Física y Matemáticas-Instituto Politécnico Nacional (IPN), C.P. 07738, México DF (Mexico)
2. Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià de Besòs, Barcelona (Spain)

In this work, a study of trap and recombination center properties in polycrystalline Cu₂ZnSnS₄ thin films is carried out in order to understand the poor performance in Cu₂ZnSnS₄ thin film solar cells. Thermally stimulated current has been studied in Cu₂ZnSnS₄ deposited by pneumatic spray pyrolysis method using various heating rates, in order to gain information about trap centers and/or deep levels present within the band-gap of this material. A set of temperature-dependent current curves revealed three levels with activation energy of 126±10, 476±25, and 1100±100 meV. The possible nature of the three levels found is presented, in which the first one is likely to be related to Cu{sub Zn} antisites, while second and third to Sn vacancies and Sn{sub Cu} antisites, respectively. The values of frequency factor, capture cross section, and trap concentration have been determined for each center.

• OSTI ID: 22305771
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
COPPER COMPOUNDS
CROSS SECTIONS
GAIN
HEATING RATE
POLYCRYSTALS
PYROLYSIS
QUATERNARY ALLOY SYSTEMS
RECOMBINATION
SOLAR CELLS
SPRAYS
SULFUR COMPOUNDS
TEMPERATURE DEPENDENCE
THIN FILMS
TIN COMPOUNDS
TRAPS
VACANCIES
ZINC COMPOUNDS