Enhanced performance of quantum dot solar cells based on type II quantum dots

Journal Article · Tue Oct 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4895476· OSTI ID:22305736

Xu, Feng; Yang, Xiao-Guang; Luo, Shuai; Lv, Zun-Ren; Yang, Tao ^[1]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

The characteristics of quantum dot solar cells (QDSCs) based on type II QDs are investigated theoretically. Based on a drift-diffusion model, we obtained a much higher open circuit voltage (V{sub oc}) as well as conversion efficiency in a type II QDSC, compared to type I QDSCs. The improved V{sub oc} and efficiency are mainly attributed to the much longer Auger recombination lifetime in type II QDs. Moreover, the influence of the carrier lifetime on devices' performance is discussed and clarified. In addition, an explicit criterion to determine the role of quantum dots in solar cells is put forward.

• OSTI ID: 22305736
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER LIFETIME
CONVERSION
DIFFUSION
EFFICIENCY
ELECTRIC POTENTIAL
QUANTUM DOTS
RECOMBINATION
SIMULATION
SOLAR CELLS