Band offsets of TiZnSnO/Si heterojunction determined by x-ray photoelectron spectroscopy

Journal Article · Sun Sep 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4896764· OSTI ID:22305730

Sun, R. J.; Jiang, Q. J.; Yan, W. C.; Feng, L. S.; Lu, B.; Ye, Z. Z. ^[1]; Li, X. F. ^[2]; Li, X. D. ^[3]

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1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072 (China)
3. Xinyi PV Products (Anhui) Holdings LTD, Xinyi PV Glass Industrial Zone, No. 2 Xinyi Road, ETDZ, Wuhu 241009 (China)

X-ray photoelectron spectroscopy (XPS) was utilized to measure the valence band offset (ΔE{sub V}) of the TiZnSnO (TZTO)/Si heterojunction. TZTO films were deposited on Si (100) substrates using magnetron sputtering at room temperature. By using the Zn 2p{sub 3/2} and Sn 3d{sub 5/2} energy levels as references, the value of ΔE{sub V} was calculated to be 2.69 ± 0.1 eV. Combining with the experimental optical energy band gap of 3.98 eV for TZTO extracted from the UV-vis transmittance spectrum, the conduction band offset (ΔE{sub C}) was deduced to be 0.17 ± 0.1 eV at the interface. Hence, the energy band alignment of the heterojunction was determined accurately, showing a type-I form. This will be beneficial for the design and application of TZTO/Si hybrid devices.

• OSTI ID: 22305730
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALIGNMENT
ENERGY LEVELS
EV RANGE
FILMS
HETEROJUNCTIONS
HYBRID SYSTEMS
INTERFACES
MAGNETRONS
OXYGEN COMPOUNDS
SILICON
SPECTRA
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TIN COMPOUNDS
TITANIUM COMPOUNDS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC COMPOUNDS