Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain)
- CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France)
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain and Dep. de Física, Univ. Autònoma de Barcelona, 08193 Bellaterra (Spain)
- IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.
- OSTI ID:
- 22304472
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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