Time evolution studies of laser induced chemical changes in InAs nanowire using Raman spectroscopy

Journal Article · Mon Jul 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4890212· OSTI ID:22304471

Pal, Suparna; Aggarwal, R.; Kumari Gupta, Vandna; Ingale, Alka ^[1]

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1. Laser Physics Application Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, MP (India)

We report the study of time evolution of chemical changes on the surface of an InAs nanowire (NW) on laser irradiation in different power density regime, using Raman spectroscopy for a time span of 8–16 min. Mixture of metastable oxides like InAsO{sub 4,} As{sub 2}O{sub 3} are formed upon oxidation, which are reflected as sharp Raman peaks at ∼240–254 and 180–200 cm{sup −1}. Evidence of removal of arsenic layer by layer is also observed at higher power density. Position controlled laser induced chemical modification on a nanometer scale, without changing the core of the NW, can be useful for NW based device fabrication.

• OSTI ID: 22304471
• Journal Information: Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ARSENIC OXIDES
FABRICATION
INDIUM ARSENIDES
LASER RADIATION
LASERS
LAYERS
MODIFICATIONS
NANOWIRES
OXIDATION
POWER DENSITY
RAMAN SPECTROSCOPY
SURFACES