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Title: Electrically induced insulator to metal transition in epitaxial SmNiO{sub 3} thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4890329· OSTI ID:22304469
; ;  [1]; ; ;  [2]
  1. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)

We report on the electrically induced insulator to metal transition (IMT) in SmNiO{sub 3} thin films grown on (001) LaAlO{sub 3} by pulsed laser deposition. The behavior of the resistivity as a function of temperature suggests that the primary transport mechanism in the SmNiO{sub 3} insulating state is dominated by Efros-Shklovskii variable range hopping (ES-VRH). Additionally, the magnetic transition in the insulating state of SmNiO{sub 3} modifies the characteristics of the ES-VRH transport. Systematic DC and pulsed current-voltage measurements indicate that current-induced joule heating is the fundamental mechanism driving the electrically induced IMT in SmNiO{sub 3}. These transport properties are explained in context of the IMT in SmNiO{sub 3} being related to the strong electron-lattice coupling.

OSTI ID:
22304469
Journal Information:
Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English