Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Journal Article · Mon Jun 23 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4885499· OSTI ID:22304448

Kurita, Y.; Kobayashi, K.; Boubanga Tombet, S.; Suemitsu, T.; Otsuji, T. ^[1]; Ducournau, G. ^[2]; Coquillat, D.; Knap, W. ^[3]; Meziani, Y. M. ^[4]; Popov, V. V. ^[5]

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1. Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
2. Institut d'Electronique, de Microélectronique et de Nanotechnologie, 59562 Villeneuve d'Ascq Cedex (France)
3. Laboratoire Charles Coulomb, UMR 5221, Université Montpellier 2 - CNRS, F-34095 Montpellier (France)
4. Departamento de Fisica Aplicada, Universidad de Salamanca, Salamanca 37008 (Spain)
5. Kotelnikov Institute of Radio Engineering and Electronics, 410019 Saratov (Russian Federation)

We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz{sup 0.5} at 200 GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2–2 THz is in good agreement with the theory.

• OSTI ID: 22304448
• Journal Information: Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ASYMMETRY
DETECTION
ELECTRON MOBILITY
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
PHOSPHORUS COMPOUNDS
PLASMONS
SIMULATION
TEMPERATURE RANGE 0273-0400 K
THZ RANGE
TRANSISTORS