Fabrication and characterization of p-channel Si double quantum dots
- Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552 (Japan)
- Department of Physical Electronics, Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552 (Japan)
Lithographically defined p-channel Si single hole transistors (SHTs) and double quantum dot (DQD) devices are fabricated and characterized. Coulomb oscillations are clearly evident at a temperature of 4.2 K. The charging energy and the diameter of the SHT are estimated from the Coulomb diamonds. Honeycomb-like charge stability diagrams are observed from measurements of the DQD devices. Single hole transitions through the DQD are detected using an integrated SHT as a charge sensor, and a few-hole regime of the DQD is observed.
- OSTI ID:
- 22304433
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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