Investigations of stochastic resonance in two-terminal device with vanadium dioxide film
- Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13 Lavrentyev aven., Novosibirsk 630090 (Russian Federation)
The results of stochastic resonance investigation in a nonlinear system, consisting of a microstructure with a polycrystalline vanadium dioxide (VO{sub 2}) film grown on sapphire and resistor in series are reported. Nonlinearity of the system was provided due to insulator-metal phase transition in VO{sub 2}. In the stochastic resonance regime at 100 Hz signal frequency, the transition coefficient of signal-to-noise ratio reached 87 in contrast to 250 for microstructures with VO{sub 2} films grown on silica in our previous investigations. The measured characteristics of microstructures with VO{sub 2} films grown on silica and sapphire substrates were found to be qualitatively similar. For both substrates, a stochastic resonance was observed at threshold switching voltage from insulating to metallic state of VO{sub 2}. For sapphire substrate the output signal-to-noise ratio rose at higher signal frequencies. The stochastic resonance phenomenon in VO{sub 2} films is explained in terms of the monostable damped oscillator model.
- OSTI ID:
- 22304326
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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