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Title: Stark spectroscopy of CdTe and CdMnTe quantum dots embedded in n-i-p diodes

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4878978· OSTI ID:22304319
; ; ; ;  [1]
  1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland)

We investigate charging effects in CdTe and Cd{sub 1−x}Mn{sub x}Te quantum dots embedded in n-i-p diodes. The tunneling of holes out of the dots at reverse bias and hole injection at forward bias control the dot charge state and allow for its electric field tuning. Furthermore, we analyze the Stark shifts of the photoluminescence transitions and evaluate the effect of the electric field on the binding of the observed excitonic complexes. We find that the binding can be strengthened or weakened depending on the zero-field alignment of the electron and hole wavefunctions.

OSTI ID:
22304319
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English