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Title: Optical properties of nanocrystalline WO{sub 3} and WO{sub 3-x} thin films prepared by DC magnetron sputtering

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4880162· OSTI ID:22304251
;  [1];  [2]
  1. Division of Solid State Physics, Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-75121 Uppsala (Sweden)
  2. Division of Physical Chemistry, Department of Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 523, SE-75120 Uppsala (Sweden)

The optical properties of tungsten trioxide thin films prepared by DC magnetron sputtering, with different oxygen vacancy (V{sub o}) concentration, have been studied by spectrophotometry and photoluminescence (PL) emission spectroscopy. Absorption and PL spectra show that the films exhibit similar band gap energies, E{sub g} ≈ 2.9 eV. The absorption spectra of the films show two pronounced absorption bands in the near-infrared region. One peak (P1) is located at approximately 0.7 eV, independent of V{sub o} concentration. A second peak (P2) shifts from 0.96 eV to 1.16 eV with decreasing V{sub o} concentration. Peak P1 is assigned to polaron absorption due to transitions between tungsten sites (W{sup 5+} → W{sup 6+}), or an optical transition from a neutral vacancy state to the conduction band, V{sub o}{sup 0} → W{sup 6+}. The origin of peak P2 is more uncertain but may involve +1 and +2 charged vacancy sites. The PL spectra show several emission bands in the range 2.07 to 3.10 eV in the more sub-stoichiometric and 2.40 to 3.02 eV in the less sub-stoichiometric films. The low energy emission bands agree well with calculated optical transition energies of oxygen vacancy sites, with dominant contribution from neutral and singly charged vacancies in the less sub-stoichiometric films, and additional contributions from doubly charged vacancy sites in the more sub-stoichiometric films.

OSTI ID:
22304251
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English