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Title: Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

Abstract

In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

Authors:
; ;  [1]; ;  [2];  [3];  [3];  [4]
  1. Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw (Poland)
  2. Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble (France)
  3. Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland)
  4. Weizmann Institute of Science, Rehevot 76100 (Israel)
Publication Date:
OSTI Identifier:
22304226
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; AMPLITUDES; DETECTION; ELECTRON GAS; ELECTRON MOBILITY; EXCITATION; GALLIUM ARSENIDES; LASER RADIATION; MAGNETIC FIELDS; PLASMA; PLASMONS; RESONANCE; SPECTRA; SPECTROMETERS; SPECTROSCOPY; TEMPERATURE RANGE 0000-0013 K; THZ RANGE

Citation Formats

Białek, M., E-mail: marcin.bialek@fuw.edu.pl, Witowski, A. M., Grynberg, M., Łusakowski, J., Orlita, M., Potemski, M., Czapkiewicz, M., Wróbel, J., Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów, and Umansky, V. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure. United States: N. p., 2014. Web. doi:10.1063/1.4881777.
Białek, M., E-mail: marcin.bialek@fuw.edu.pl, Witowski, A. M., Grynberg, M., Łusakowski, J., Orlita, M., Potemski, M., Czapkiewicz, M., Wróbel, J., Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów, & Umansky, V. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure. United States. https://doi.org/10.1063/1.4881777
Białek, M., E-mail: marcin.bialek@fuw.edu.pl, Witowski, A. M., Grynberg, M., Łusakowski, J., Orlita, M., Potemski, M., Czapkiewicz, M., Wróbel, J., Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów, and Umansky, V. 2014. "Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure". United States. https://doi.org/10.1063/1.4881777.
@article{osti_22304226,
title = {Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure},
author = {Białek, M., E-mail: marcin.bialek@fuw.edu.pl and Witowski, A. M. and Grynberg, M. and Łusakowski, J. and Orlita, M. and Potemski, M. and Czapkiewicz, M. and Wróbel, J. and Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów and Umansky, V.},
abstractNote = {In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.},
doi = {10.1063/1.4881777},
url = {https://www.osti.gov/biblio/22304226}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 21,
volume = 115,
place = {United States},
year = {Sat Jun 07 00:00:00 EDT 2014},
month = {Sat Jun 07 00:00:00 EDT 2014}
}