Direct growth of graphene on Si(111)

Journal Article · Sat Jun 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4882181· OSTI ID:22304170

Joucken, Frédéric; Colomer, Jean-François; Robert, Sporken ^[1]; Campos-Delgado, Jessica; Raskin, Jean-Pierre ^[2]; Hackens, Benoît; Santos, Cristiane N. ^[3]

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1. Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), 61 Rue de Bruxelles, 5000 Namur (Belgium)
2. Electrical Engineering (ELEN), Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain UCL, 3 place du Levant, Louvain-la-Neuve (Belgium)
3. Nanoscopic physics (NAPS), Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain UCL, 2 chemin du Cyclotron, Louvain-la-Neuve (Belgium)

Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

• OSTI ID: 22304170
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
AUGER ELECTRON SPECTROSCOPY
CRYSTAL GROWTH
CURRENTS
DEPOSITION
ELECTRON BEAMS
ELECTRON DIFFRACTION
GRAPHENE
NANOSTRUCTURES
PHOTOEMISSION
RAMAN SPECTROSCOPY
RESOLUTION
SCANNING ELECTRON MICROSCOPY
SCANNING TUNNELING MICROSCOPY
SILICON
X RADIATION