Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO{sub 3} cells
- School of Physics, Korea Institute for Advanced Study, Seoul 130-722 (Korea, Republic of)
- Analytical Science Group, Samsung Advanced Institute of Technology, Yongin, Gyeonggi-do 446-712 (Korea, Republic of)
- Logic TD, Semiconductor R and D Center, Samsung Electronics, Hwaseong-si, Gyeonggi-do 445-701 (Korea, Republic of)
In conventional semiconductor theory, greater doping decreases the electronic resistance of a semiconductor. For the bipolar resistance switching (BRS) phenomena in oxides, the same doping principle has been used commonly to explain the relationship between the density variation of oxygen vacancies (V{sub o}¨) and the electronic resistance. We find that the V{sub o}¨ density can change at a depth of ∼10 nm below the Pt electrodes in Pt/Nb:SrTiO{sub 3} cells, depending on the resistance state. Using electron energy loss spectroscopy and secondary ion mass spectrometry, we found that greater V{sub o}¨ density underneath the electrode resulted in higher resistance, contrary to the conventional doping principle of semiconductors. To explain this seemingly anomalous experimental behavior, we provide quantitative explanations on the anomalous BRS behavior by simulating the mobile V{sub o}¨ [J. S. Lee et al., Appl. Phys. Lett. 102, 253503 (2013)] near the Schottky barrier interface.
- OSTI ID:
- 22303975
- Journal Information:
- APL Materials, Vol. 2, Issue 6; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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