Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions

Journal Article · Mon Jul 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4890084· OSTI ID:22303953

Lam, Kai Tak; Seol, Gyungseon; Guo, Jing ^[1]

---

1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611-6130 (United States)

A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The transistor shows excellent saturation of output I-V characteristics due to drain-induced depletion and lack of tunneling barrier layers. The subthreshold slope could be below the thermionic limit due to band filtering as the switching mechanism. The atomically thin vertical PN heterojunction can be electrostatically modulated from a type II heterojunction to a broken bandgap alignment, which is preferred for maximizing the on-current.

• OSTI ID: 22303953
• Journal Information: Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENTS
DEPLETION LAYER
ELECTRIC CONDUCTIVITY
FILTERS
HETEROJUNCTIONS
SATURATION
SEMICONDUCTOR MATERIALS
SIMULATION
TRANSISTORS
TUNNEL EFFECT