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Title: Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

Abstract

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm{sup 2} V{sup −1} s{sup −1} at room temperature to 49 000 cm{sup 2} V{sup −1} s{sup −1} at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.

Authors:
; ; ;  [1]
  1. Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands)
Publication Date:
OSTI Identifier:
22303948
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; CARRIER MOBILITY; CRYSTALS; FABRICATION; GRAPHENE; LAYERS; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Zomer, P. J., E-mail: pj.zomer@gmail.com, Guimarães, M. H. D., Brant, J. C., Tombros, N., and Wees, B. J. van. Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride. United States: N. p., 2014. Web. doi:10.1063/1.4886096.
Zomer, P. J., E-mail: pj.zomer@gmail.com, Guimarães, M. H. D., Brant, J. C., Tombros, N., & Wees, B. J. van. Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride. United States. https://doi.org/10.1063/1.4886096
Zomer, P. J., E-mail: pj.zomer@gmail.com, Guimarães, M. H. D., Brant, J. C., Tombros, N., and Wees, B. J. van. 2014. "Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride". United States. https://doi.org/10.1063/1.4886096.
@article{osti_22303948,
title = {Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride},
author = {Zomer, P. J., E-mail: pj.zomer@gmail.com and Guimarães, M. H. D. and Brant, J. C. and Tombros, N. and Wees, B. J. van},
abstractNote = {We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm{sup 2} V{sup −1} s{sup −1} at room temperature to 49 000 cm{sup 2} V{sup −1} s{sup −1} at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.},
doi = {10.1063/1.4886096},
url = {https://www.osti.gov/biblio/22303948}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 1,
volume = 105,
place = {United States},
year = {Mon Jul 07 00:00:00 EDT 2014},
month = {Mon Jul 07 00:00:00 EDT 2014}
}