AlGaN composition dependence of the band offsets for epitaxial Gd{sub 2}O{sub 3}/Al{sub x}Ga{sub 1−x}N (0 ≤ x ≤ 0.67) heterostructures

Journal Article · Mon Jul 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4889883· OSTI ID:22303944

Brumbach, Michael; Allerman, Andrew A.; Wheeler, David R.; Atcitty, Stanley ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Gd{sub 2}O{sub 3} films were prepared on (0001)-oriented Al{sub x}Ga{sub 1−x}N (0 ≤ x ≤ 0.67) thin film substrates via reactive molecular-beam epitaxy. X-ray diffraction revealed that these films possessed the cubic bixbyite structure regardless of substrate composition and were all 111-oriented with in-plane rotations to account for the symmetry difference between the oxide film and nitride epilayer. Valence band offsets were characterized by X-ray photoelectron spectroscopy and were determined to be 0.41 ± 0.02 eV, 0.17 ± 0.02 eV, and 0.06 ± 0.03 eV at the Gd{sub 2}O{sub 3}/Al{sub x}Ga{sub 1−x}N interfaces for x = 0, 0.28, and 0.67, respectively.

• OSTI ID: 22303944
• Journal Information: Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
EV RANGE
GADOLINIUM OXIDES
GALLIUM NITRIDES
INTERFACES
MOLECULAR BEAM EPITAXY
ROTATION
SUBSTRATES
SYMMETRY
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY