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Title: Phosphorescence quenching by mechanical stimulus in CaZnOS:Cu

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4890112· OSTI ID:22303943
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  1. National Institute of Advanced Industrial Science and Technology (AIST), Saga 841-0052 (Japan)

We have found that phosphorescence intensity of CaZnOS:Cu decreased visibly under an applied load. This mechanical quenching (MQ) of phosphorescence in CaZnOS:Cu corresponded to the mechanical stimuli. We have thus demonstrated that the MQ of CaZnOS:Cu could be used for visualizing stress distributions in practical applications. We propose that MQ arises from non-radiative recombination due to electron-transfer from trap levels to non-radiative centers as a result of the mechanical load.

OSTI ID:
22303943
Journal Information:
Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English