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Title: Doping efficiency of single and randomly stacked bilayer graphene by iodine adsorption

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4889747· OSTI ID:22303939
; ; ; ;  [1]; ; ;  [2]
  1. Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France)
  2. Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LITEN, Minatec Campus, F-38054 Grenoble (France)

We report on the efficiency and thermal stability of p-doping by iodine on single and randomly stacked, weakly coupled bilayer polycrystalline graphene, as directly measured by photoelectron emission microscopy. The doping results in work function value increase of 0.4–0.5 eV, with a higher degree of iodine uptake by the bilayer (2%) as compared to the single layer (1%) suggesting iodine intercalation in the bilayer. The chemistry of iodine is identified accordingly as I{sub 3}{sup −} and I{sub 5}{sup −} poly iodide anionic complexes with slightly higher concentration of I{sub 5}{sup −} in bilayer than monolayer graphene, likely attributed to differences in doping mechanisms. Temperature dependent in-situ annealing of the doped films demonstrated that the doping remains efficient up to 200 °C.

OSTI ID:
22303939
Journal Information:
Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English