Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon
Abstract
We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ∼7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.
- Authors:
-
- Univ. Grenoble Alpes, INAC-SP2M, CEA-CNRS group “Nanophysique et Semiconducteurs,” F-38000 Grenoble (France)
- Université Montpellier 2, Laboratoire Charles Coulomb UMR 5221, F-34905 Montpellier (France)
- CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne (France)
- Publication Date:
- OSTI Identifier:
- 22303922
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CAVITY RESONATORS; CRYSTALS; GALLIUM NITRIDES; HOLES; LOSSES; NEAR INFRARED RADIATION; PERIODICITY; QUALITY FACTOR; RESONANCE; SILICON; SUBSTRATES; TRANSMISSION
Citation Formats
Roland, I., Zeng, Y., Han, Z., Checoury, X., Blin, C., El Kurdi, M., Ghrib, A., Sauvage, S., Boucaud, P., E-mail: philippe.boucaud@ief.u-psud.fr, Gayral, B., CEA, INAC-SP2M, CEA-CNRS group “Nanophysique et Semiconducteurs,” F-38000 Grenoble, Brimont, C., Guillet, T., and Semond, F. Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon. United States: N. p., 2014.
Web. doi:10.1063/1.4887065.
Roland, I., Zeng, Y., Han, Z., Checoury, X., Blin, C., El Kurdi, M., Ghrib, A., Sauvage, S., Boucaud, P., E-mail: philippe.boucaud@ief.u-psud.fr, Gayral, B., CEA, INAC-SP2M, CEA-CNRS group “Nanophysique et Semiconducteurs,” F-38000 Grenoble, Brimont, C., Guillet, T., & Semond, F. Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon. United States. https://doi.org/10.1063/1.4887065
Roland, I., Zeng, Y., Han, Z., Checoury, X., Blin, C., El Kurdi, M., Ghrib, A., Sauvage, S., Boucaud, P., E-mail: philippe.boucaud@ief.u-psud.fr, Gayral, B., CEA, INAC-SP2M, CEA-CNRS group “Nanophysique et Semiconducteurs,” F-38000 Grenoble, Brimont, C., Guillet, T., and Semond, F. 2014.
"Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon". United States. https://doi.org/10.1063/1.4887065.
@article{osti_22303922,
title = {Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon},
author = {Roland, I. and Zeng, Y. and Han, Z. and Checoury, X. and Blin, C. and El Kurdi, M. and Ghrib, A. and Sauvage, S. and Boucaud, P., E-mail: philippe.boucaud@ief.u-psud.fr and Gayral, B. and CEA, INAC-SP2M, CEA-CNRS group “Nanophysique et Semiconducteurs,” F-38000 Grenoble and Brimont, C. and Guillet, T. and Semond, F.},
abstractNote = {We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ∼7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.},
doi = {10.1063/1.4887065},
url = {https://www.osti.gov/biblio/22303922},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 1,
volume = 105,
place = {United States},
year = {Mon Jul 07 00:00:00 EDT 2014},
month = {Mon Jul 07 00:00:00 EDT 2014}
}
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