Voltage polarity manipulation of the magnetoresistance sign in organic spin valve devices

Journal Article · Mon Jun 30 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4885770· OSTI ID:22303894

Jiang, S. W.; Chen, B. B.; Wang, P.; Zhou, Y.; Shi, Y. J.; Yue, F. J.; Ding, H. F.

The spin transport in organic spin valve (OSV) devices has been systematically investigated by inserting a low work function material Al between ferromagnetic electrode and organic layer. The resistance and current-voltage curve symmetry are dramatically altered as increasing Al thickness, indicating that an electron-unipolar OSV is obtained. Moreover, the magnetoresistance sign depends on the voltage polarity for certain Al thickness. We attribute this phenomenon to the Fermi and the lowest unoccupied molecular orbits energies of the two electrodes responding to the spin injection and detection, respectively. These findings provide a simple approach to control both the carrier type and the spin direction simultaneously.

• OSTI ID: 22303894
• Journal Information: Applied Physics Letters, Vol. 104, Issue 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
CARRIERS
CONTROL
DETECTION
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRODES
FERROMAGNETIC MATERIALS
INJECTION
LAYERS
MAGNETORESISTANCE
ORGANIC MATTER
SPIN
SYMMETRY
THICKNESS
VALVES
WORK FUNCTIONS