Conversion of above- and below-bandgap photons via InAs quantum dot media embedded into GaAs solar cell

Journal Article · Mon Jun 23 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4885113· OSTI ID:22303880

Sablon, K.; Little, J. ^[1]; Vagidov, N. ^[2]; Li, Y.; Mitin, V.; Sergeev, A. ^[3]

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1. U.S. Army Research Laboratory, Adelphi, Maryland 20783 (United States)
2. Optoelectronic Nanodevices LLC, Amherst, New York 14226 (United States)
3. EE Department, University at Buffalo—SUNY, Buffalo, New York 14260 (United States)

Quantum dots (QDs) provide photovoltaic conversion of below-bandgap photons due to multistep electron transitions. QDs also increase conversion efficiency of the above-bandgap photons due to extraction of electrons from QDs via Coulomb interaction with hot electrons excited by high-energy photons. Nanoscale potential profile (potential barriers) and nanoscale band engineering (AlGaAs atomically thin barriers) allow for suppression of photoelectron capture to QDs. To study these kinetic effects and to distinguish them from the absorption enhancement due to light scattering on QDs, we investigate long, 3-μm base GaAs devices with various InAs QD media with 20 and 40 QD layers. Quantum efficiency measurements show that, at least at low doping, the multistep processes in QD media are strongly affected by the wetting layer (WL). The QD media with WLs provide substantial conversion of below-bandgap photons and for devices with 40 QD layers the short circuit current reaches 29.2 mA/cm{sup 2}. The QD media with band-engineered AlGaAs barriers and reduced wetting layers (RWL) enhance conversion of high-energy photons and decrease the relaxation (thermal) losses.

• OSTI ID: 22303880
• Journal Information: Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALUMINIUM COMPOUNDS
ELECTRICAL FAULTS
ELECTRONS
ENGINEERS
EXTRACTION
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERACTIONS
LAYERS
LIGHT SCATTERING
PHOTONS
PHOTOVOLTAIC CONVERSION
QUANTUM DOTS
QUANTUM EFFICIENCY
RELAXATION
SOLAR CELLS