High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization
- Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge crystals on flexible-plastic directly formed by nucleation-controlled gold-induced-crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-crystallization (AIC). The Ge crystals show p-type conductions. Here, hole concentrations are 2.2 × 10{sup 17} and 5.8 × 10{sup 20} cm{sup −3} for GIC-Ge and AIC-Ge, respectively, which are explained on the basis of the solubility of Au and Al in Ge. Thanks to the low hole concentration, GIC-Ge shows high hole mobility (160 cm{sup 2} V{sup −1} s{sup −1}) compared with AIC-Ge (37 cm{sup 2} V{sup −1} s{sup −1}). These demonstrate significant advantage of GIC to realize high-performance flexible-electronics.
- OSTI ID:
- 22303859
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
High Efficiency, Inexpensive Thin Film III-V Photovoltaics using Single-Crystalline-Like, Flexible Substrates
Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes