Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

Journal Article · Mon Jun 23 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4885501· OSTI ID:22303857

El Mhamdi, El Mahdi; Holovsky, Jakub; Demaurex, Bénédicte; Ballif, Christophe

Thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) surfaces are sensitive probes for the bulk electronic properties of a-Si:H. Here, we use such samples during repeated low-temperature annealing and visible-light soaking to investigate the long-term stability of a-Si:H films. We observe that during annealing the electronic improvement of the interfaces follows stretched exponentials as long as hydrogen evolution in the films can be detected. Once such evolution is no longer observed, the electronic improvement occurs much faster. Based on these findings, we discuss how the reversibility of light-induced defects depends on (the lack of observable) hydrogen evolution.

• OSTI ID: 22303857
• Journal Information: Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ANNEALING
CRYSTAL DEFECTS
CRYSTALS
EVOLUTION
FILMS
HYDROGEN ADDITIONS
HYDROGENATION
INTERFACES
SILICON
STABILITY
SURFACES
VISIBLE RADIATION