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Title: High magnetic field studies of charged exciton localization in GaAs/Al{sub x}Ga{sub 1−x}As quantum wells

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4896158· OSTI ID:22303512
; ; ;  [1];  [2];  [3]; ;  [3]; ; ;  [4]
  1. Institute of Physics, Wrocław University of Technology, 50-370 Wroclaw (Poland)
  2. Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, Grenoble (France)
  3. Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany)
  4. Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 OHE (United Kingdom)

We report on low temperature, polarization resolved, high magnetic field (up to 23 T) photoluminescence experiments on high mobility asymmetric GaAs quantum wells. At high magnetic fields, we detect two strong emission lines of the neutral and positively charged excitons (X and X{sup +}) and a series of weaker lines of the excitons bound to ionized acceptors (AX{sup −}). From polarization energy splittings of these lines, we determine the hole Landé factors (g{sub h}) of different complexes. For X and X{sup +}, g{sub h} initially grows with magnetic field and then saturates at g{sub h} = 0.88 and 1.55, respectively; for AX{sup −}'s, g{sub h} begins from a high value (from 6 to 11 at zero field) and decreases with the field growth. This contrasting behavior is traced to the structure of valence band Landau levels, calculated numerically in the Luttinger model, beyond axial approximation. This points to the coexistence (in the same well) of mobile X and X{sup +} with localized and interface-pressed AX{sup −} states.

OSTI ID:
22303512
Journal Information:
Applied Physics Letters, Vol. 105, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English