In situ variations of carrier decay and proton induced luminescence characteristics in polycrystalline CdS

Journal Article · Sat Jun 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4885757· OSTI ID:22303426

Ceponis, T.; Jasiunas, A.; Kalesinskas, V.; Meskauskaite, D.; Pavlov, J.; Tamulaitis, G.; Tekorius, A. ^[1]; Brytavskyi, I. ^[2]; Kovalevskij, V.; Remeikis, V. ^[3]

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1. Institute of Applied Research, Vilnius University, Vilnius LT-10222 (Lithuania)
2. Odessa I.I.Mechnikov National University, Odessa 65082 (Ukraine)
3. Centre for Physical Sciences and Technology, Vilnius LT-02300 (Lithuania)

Evolution of the microwave-probed photoconductivity transients and of the proton induced luminescence has simultaneously been examined in polycrystalline CdS layers evaporated in vacuum during exposure to a 1.6 MeV proton beam. The decrease of the intensity of luminescence peaked at 510 and 709 nm wavelengths and of values of the effective carrier lifetime has been correlated in dependence of proton irradiation fluence. The defect introduction rate has been evaluated by the comparative analysis of the laser and proton beam induced luminescence. The difference of a carrier pair generation mechanism inherent for light and for a proton beam has been revealed.

• OSTI ID: 22303426
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CADMIUM SULFIDES
CARRIER LIFETIME
CARRIERS
DECAY
DEFECTS
IRRADIATION
LASER RADIATION
LAYERS
LUMINESCENCE
MEV RANGE 01-10
MICROWAVE RADIATION
PHOTOCONDUCTIVITY
POLYCRYSTALS
PROTON BEAMS
TRANSIENTS
VISIBLE RADIATION
WAVELENGTHS