Low temperature photoresponse of monolayer tungsten disulphide

Journal Article · Sat Nov 01 00:00:00 EDT 2014 · APL Materials

DOI:https://doi.org/10.1063/1.4900816· OSTI ID:22303416

Cao, Bingchen; Shen, Xiaonan; Shang, Jingzhi; Cong, Chunxiao; Yang, Weihuang; Eginligil, Mustafa ^[1]; Yu, Ting ^[1]

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1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371 (Singapore)

High photoresponse can be achieved in monolayers of transition metal dichalcogenides. However, the response times are inconveniently limited by defects. Here, we report low temperature photoresponse of monolayer tungsten disulphide prepared by exfoliation and chemical vapour deposition (CVD) method. The exfoliated device exhibits n-type behaviour; while the CVD device exhibits intrinsic behaviour. In off state, the CVD device has four times larger ratio of photoresponse for laser on/off and photoresponse decay–rise times are 0.1 s (limited by our setup), while the exfoliated device has few seconds. These findings are discussed in terms of charge trapping and localization.

• OSTI ID: 22303416
• Journal Information: APL Materials, Vol. 2, Issue 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
EQUIPMENT
TEMPERATURE RANGE 0065-0273 K
TUNGSTEN