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Title: Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range

Journal Article · · Semiconductors
;  [1]; ;  [2]
  1. Russian Academy of Sciences, Institute of the Physics of Microstructures (Russian Federation)
  2. Russian Academy of Sciences, Rzhanov Institute of Semiconductors, Siberian Branch (Russian Federation)

The magnetoabsorption and photoconductivity spectra are investigated in the terahertz (THz) range at a temperature of T = 4.2 K for n-Hg{sub 1−x}Cd{sub x}Te bulk epitaxial layers of various compositions (both semiconductor and semimetallic) grown by molecular-beam epitaxy. Within the framework of the Kane 8 · 8 model, the electron and hole Landau levels are calculated. It is shown that, in contrast to the results of previous investigations, all observed resonance lines are related to transitions between the Landau levels of free carriers (the cyclotron resonance in the conduction band and the transitions between heavy-hole and electron Landau levels), which is evidence of the high purity and structural perfection of the samples. The possibility of using zero-gap Hg{sub 1−x}Cd{sub x}Te solid solutions as THz photodetectors tunable by magnetic field is shown.

OSTI ID:
22300432
Journal Information:
Semiconductors, Vol. 47, Issue 12; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English