Electrical properties of diluted n- and p-Si{sub 1−x}Ge{sub x} at small x

Journal Article · Mon Dec 15 00:00:00 EST 2014 · Semiconductors

DOI:https://doi.org/10.1134/S1063782614120069· OSTI ID:22300413

Abrosimov, N. V. ^[1]; Kozlovskii, V. V. ^[2]; Oganesyan, G. A. ^[3]

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1. Leibniz Institute for Crystal Growth (Germany)
2. St. Petersburg Polytechnical State University (Russian Federation)
3. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Hall effect and conductivity measurements are taken on Si{sub 1−x}Ge{sub x} of n- and p-type at x ≤ 0.05. Much attention is given to electrical measurements over a temperature interval of 25 to 40 K where the mobility of charged carriers is strongly affected by alloy scattering. The partial mobility of electrons and holes due to this scattering mechanism is estimated for n-Si{sub 1−x}Ge{sub x} and p-Si{sub 1−x}Ge{sub x} at small x. Together with this, an effect of the presence of Ge atoms upon the ionization energy of phosphorus and boron impurities is investigated. Some points related to an inhomogeneous distribution of Ge atoms in Si{sub 1−x}Ge{sub x} are discussed.

• OSTI ID: 22300413
• Journal Information: Semiconductors, Vol. 48, Issue 12; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
BORON
ELECTRICAL PROPERTIES
HALL EFFECT
MOBILITY
PHOSPHORUS
SCATTERING