skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Specific features of the photoconductivity of semi-insulating cadmium telluride

Journal Article · · Semiconductors
; ; ;  [1];  [2]
  1. National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics (Russian Federation)
  2. OAO GIREDMET State Research and Design Institute of the Rare-Metal Industry (Russian Federation)

The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

OSTI ID:
22300395
Journal Information:
Semiconductors, Vol. 48, Issue 13; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English

Similar Records

Features of Stationary Photoconductivity of High-Ohmic Semiconductors Under Local Illumination
Journal Article · Sun Apr 15 00:00:00 EDT 2018 · Russian Physics Journal · OSTI ID:22300395

Semi-transparent p-type barium copper sulfide as a back contact interface layer for cadmium telluride solar cells
Journal Article · Tue Sep 08 00:00:00 EDT 2020 · Solar Energy Materials and Solar Cells · OSTI ID:22300395

Polarization in cadmium telluride nuclear radiation detectors
Conference · Sun Feb 01 00:00:00 EST 1976 · IEEE Trans. Nucl. Sci., v. NS-23, no. 1, pp. 159-170 · OSTI ID:22300395