Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes
- National Research Council (CNR), Institute for Photonics and Nanotechnologies (IFN-CNR), via Cineto Romano 42, 00156 Roma (Italy)
- Department of Electronic and Electrical Engineering, University of Sheffield, S3 3JD Sheffield (United Kingdom)
We report on the tuning of the spectral response of superlattice (SL) diodes based on dilute nitride Ga(AsN) alloys by post-growth hydrogenation. Hydrogen is incorporated into the superlattice where it neutralizes the electronic activity of nitrogen by forming N-H complexes. We exploit the controlled thermal dissociation of the complexes to tune the energy of the SL photocurrent absorption and electroluminescence emission; also, by annealing a submicron spot with a focused laser beam we create a preferential path for the injection of carriers, thus activating a nanoscale light emitting region. This method can be used for fabricating planar diode arrays with distinct optical active regions, all integrated onto a single substrate.
- OSTI ID:
- 22300302
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ANNEALING
ARSENIC COMPOUNDS
ELECTROLUMINESCENCE
GALLIUM COMPOUNDS
HYDROGEN IONS
HYDROGENATION
ION BEAMS
IRRADIATION
LASER RADIATION
NANOSTRUCTURES
NITROGEN COMPOUNDS
SPECTRAL RESPONSE
SUBSTRATES
SUPERLATTICES
TERNARY ALLOY SYSTEMS
VISIBLE RADIATION